2001. 9. 14 1/2 semiconductor technical data KTC945 epitaxial planar npn transistor revision no : 2 general purpose application. switching application. features excellent h fe linearity. : h fe (i c =0.1ma)/h fe (i c =2ma)=0.95(typ.) low noise : nf=1db(typ.). at f=1khz complementary to kta733. maximum rating (ta=25 1 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. emitter 2. collector 3. base + _ electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current i c 150 ma collector power dissipation p c 625 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector-base breakdown voltage v (br)cbo i c =100 a, i e =0 60 - - v collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 50 - - v emitter-base breakdown voltage v (br)ebo i e =100 a, i c =0 5 - - v collector cut-off current i cbo v cb =60v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =5v, i c =0 - - 0.1 a dc current gain h fe (note) v ce =6v, i c =2ma 90 - 600 collector-emitter saturation voltage v ce(sat) i c =100ma, i b =10ma - 0.1 0.25 v base-emitter saturation voltage v be(sat) i c =100ma, i b =10ma - - 1.0 v transition frequency f t v ce =10v, i c =10ma 80 300 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 2.0 3.5 pf noise figure nf v ce =6v, i c =0.1ma rg=10k u , f=1khz - 1.0 10 db note : h fe classification r:90 180, q:135 270, p:200 400, k:300 600
2001. 9. 14 2/2 KTC945 revision no : 2 collector current i (ma) 0 c 0 collector-emitter voltage v (v) ce ce c i - v 30 dc current gain h fe 1k 300 100 0.3 0.1 collector current i (ma) c h - i 0.3 collector-emitter saturation 3 ce(sat) 0.01 300 100 30 0.1 collector current i (ma) c v - i 10 base current i ( a) 0.3 b 3k 0 base-emitter voltage v (v) be i - v 40 80 120 160 200 240 1234 567 common emitter ta=25 c 6.0 5.0 3.0 2.0 1.0 0.5 i =0.2ma 0 b fe c 1 3 10 30 50 100 300 500 10 ce(sat) c voltage v (v) 0.3 1 3 10 0.03 0.05 0.1 0.5 1 common emitter i /i =10 cb ta=100 c 25 c -25 c ce v =10v ta=25 c common emitter 1k 500 100 50 30 -10 -3 -1 -0.3 transition frequency f (mhz) e t f - i e emitter current i (ma) -0.1 -30 -100 -300 10 t 3k 300 bbe 0.2 0.4 0.6 0.8 1.0 1.2 1 3 30 100 300 1k common v =6v ce emitter ta=100 c ta = 25 c ta = -25 c common ta=100 c ta=25 c ta=-25 c v =6v ce ce v =1v emitter c p (mw) 0 collector power dissipation 0 ambient temperature ta ( c) pc - ta 25 50 75 100 125 150 175 100 200 300 400 500 600 700
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